N28F001BXT150 Intel, N28F001BXT150 Datasheet - Page 26

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N28F001BXT150

Manufacturer Part Number
N28F001BXT150
Description
Manufacturer
Intel
Datasheet

Specifications of N28F001BXT150

Density
1Mb
Access Time (max)
150ns
Interface Type
Parallel
Boot Type
Top
Address Bus
17b
Operating Supply Voltage (typ)
5V
Operating Temp Range
0C to 70C
Package Type
PLCC
Program/erase Volt (typ)
11.4 to 12.6V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8b
Number Of Words
128K
Supply Current
30mA
Mounting
Surface Mount
Pin Count
32
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
N28F001BXT150
Manufacturer:
INT
Quantity:
3 000
Part Number:
N28F001BXT150
Manufacturer:
INT
Quantity:
3 000
Part Number:
N28F001BXT150
Manufacturer:
INTEL
Quantity:
5 510
28F001BX
10.4
NOTES:
1.
2.
3.
10.4
V
26
I
I
I
I
I
I
I
I
I
I
I
Symbol
V
V
V
V
Symbol
CC
IL
LO
CCS
CCD
CCR
CCP
CCE
CCES
PPS
PPD
PPP
PPL
PPH
LKO
HH
All currents are in RMS unless otherwise noted. Typical values at V
are valid for all product versions (packages and speeds).
I
sum of I
Erase/programs are inhibited when V
CCES
= 5.0 V ±10%, T
is specified with the device deselected. If the 28F001BX is read while in erase suspend mode, current draw is the
V
V
V
RP#, OE# Unlock Voltage
CCES
Input Load Current
Output Leakage Current
V
V
V
V
V
V
V
V
V
DC Characteristics
DC Characteristics
PP
PP
CC
CC
CC
CC
CC
CC
CC
PP
PP
PP
Standby Current
Deep Power-Down Current
Programming Current
during Normal Operations
during Prog/Erase Operations
and I
Standby Current
Deep Power-Down Current
Read Current
Programming Current
Erase Current
Erase Suspend Current
Erase/Write Lock Voltage
CCR
A
Parameter
Parameter
.
= –40 °C to +85 °C
PP
(Continued)
(Continued)
= V
PPL
and not guaranteed in the range between V
Notes Min Typ
1, 2
Notes
1
1
1
1
1
1
1
1
1
3
11.4
11.4
Min
0.0
2.5
0.05
0.80
1.2
30
13
±1
90
5
6
5
6
CC
12.0
Typ
= 5.0 V, V
Max
±1.0
±10
150
±15
400
2.0
2.0
1.0
35
20
20
10
30
Max
12.6
12.6
6.5
PP
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
= 12.0 V, T
Unit
V
V
V
V
V
V
V
V
V
CE# = RP# = V
V
CE# = RP# = V
RP# = GND ±0.2 V
V
f = 8 MHz, I
Programming in Progress
Erase in Progress
Erase Suspended
CE# = V
V
V
RP# = GND ±0.2 V
V
Programming in Progress
PPH
CC
IN
CC
OUT
CC
CC
CC
PP
PP
PP
Boot Block Prog/Erase
A
and V
= V
> V
= V
= V
= V
= V
= V
= V
= 25 °C. These currents
Test Conditions
= V
V
Test Conditions
CC
CC
CC
PP
CC
CC
CC
CC
CC
IH
PPL
CC
or GND
Max
Max
Max
Max
Max, CE# = V
.
OUT
or GND
IH
CC
= 0 mA
±0.2 V
IL

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