HN2D01F Toshiba, HN2D01F Datasheet
HN2D01F
Specifications of HN2D01F
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HN2D01F Summary of contents
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... TOSHIBA Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application HN2D01F is composed of 3 independent diodes. Low forward voltage : V F (3) Fast reverse recovery time : t rr Small total capacitance : C T Absolute Maximum Ratings Characteristic Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current ...
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... Pin Assignment (Top View) Marking 2 HN2D01F 2007-11-01 ...
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... Fig.1 Reverse Recovery Time Test Circuit ( HN2D01F 2007-11-01 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 HN2D01F 2007-11-01 ...