PUMB2 NXP Semiconductors, PUMB2 Datasheet - Page 4

PUMB2

Manufacturer Part Number
PUMB2
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMB2

Transistor Polarity
PNP
Collector-emitter Voltage
50V
Dc Current Gain (min)
80
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SOT-363
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PUMB20
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
PUMB2Ј¬115
Manufacturer:
NXP
Quantity:
30 000
NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
2003 Oct 15
Per transistor
R
Per device
R
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
i(off)
i(on)
PNP/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
th j-a
th j-a
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
thermal resistance from junction to ambient
thermal resistance from junction to ambient
SOT363
SOT666
SOT363
SOT666
PARAMETER
PARAMETER
V
V
V
V
V
I
V
V
I
f = 1 MHz
C
E
CB
CE
CE
EB
CE
CE
CE
= i
= −10 mA; I
= −5 V; I
= −50 V; I
= −30 V; I
= −30 V; I
= −5 V; I
= −5 V; I
= −0.3 V; I
e
= 0; V
4
CONDITIONS
T
note 1
notes 1 and 2
T
note 1
note 1
CB
C
C
C
amb
amb
E
B
B
B
= 0
= −5 mA
= −100 μA
C
= −10 V;
CONDITIONS
= 0
= 0
= 0; T
= −0.5 mA
= −2 mA
≤ 25 °C
≤ 25 °C
j
= 150 °C
80
−3
33
0.8
MIN.
VALUE
PEMB2; PUMB2
625
625
416
416
−1.2
−1.6
47
1
TYP.
Product data sheet
−100
−1
−50
−90
−150
−0.8
61
1.2
3
MAX.
UNIT
K/W
K/W
K/W
K/W
nA
μA
μA
μA
mV
V
V
pF
UNIT

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