SUD50N024-09P Vishay, SUD50N024-09P Datasheet

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SUD50N024-09P

Manufacturer Part Number
SUD50N024-09P
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SUD50N024-09P

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0095Ohm
Drain-source On-volt
22V
Gate-source Voltage (max)
±20V
Continuous Drain Current
49A
Power Dissipation
6.5W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD50N024-09P-E4E3
Manufacturer:
VISHAY
Quantity:
40 400
Notes
a.
b.
c.
d.
Document Number: 72290
S-41168—Rev. B, 14-Jun-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Pulse Voltage
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current, Single Pulse
Avalanche Energy, Single Pulse
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Ordering Information: SUD50N024-09P
Surface Mounted on FR4 Board, t v 10 sec.
Limited by package
Pulse condition: T
Calculation based on maximum allowable Junction Temperature. Package limitation current is 25 A.
DS
24
24
c
c
(V)
G
Top View
TO-252
D
A
S
= 105_C, 50 ns, 300 kHz operation
a
a
SUD50N024-09P—E3 (Lead Free)
0.0095 @ V
0.017 @ V
a
a
Drain Connected to Tab
r
DS(on)
N-Channel 22-V (D-S) 175_C MOSFET
Parameter
Parameter
GS
GS
(W)
= 4.5 V
= 10 V
a
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
49
36
(A)
Steady State
T
L = 0.1 mH
T
T
t v 10 sec
T
C
C
A
C
d
= 100_C
= 25_C
= 25_C
= 25_C
G
N-Channel MOSFET
D
S
Symbol
Symbol
V
T
DS(pulse)
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
AS
D
D
S
D
D
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
APPLICATIONS
D High-Side Synchronous Buck DC/DC
stg
Conversion
− Desktop
− Server
Typical
3.1
19
40
SUD50N024-09P
−55 to 175
Limit
"20
39.5
6.5
24
49d
100
34
4.3
22
29
42
Vishay Siliconix
C
d
a
Maximum
3.8
23
50
www.vishay.com
Unit
Unit
_C/W
mJ
C/W
_C
W
W
V
A
1

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SUD50N024-09P Summary of contents

Page 1

... TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N024-09P SUD50N024-09P—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Pulse Voltage Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... SUD50N024-09P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance Drain Source On State Resistance b Forward Transconductance a Dynamic ...

Page 3

... T − Junction Temperature (_C) J Document Number: 72290 S-41168—Rev. B, 14-Jun-04 0.030 0.025 25_C 0.020 125_C 0.015 0.010 0.005 0.000 100 100 125 150 175 SUD50N024-09P Vishay Siliconix On-Resistance vs. Drain Current − Drain Current (A) D Gate Charge ...

Page 4

... SUD50N024-09P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 100 T − Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − www.vishay.com 4 1000 100 10 1 0.1 0.01 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Ambient − ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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