SUD50N024-09P Vishay, SUD50N024-09P Datasheet - Page 3

• Manufacturer Part Number: SUD50N024-09P
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SUD50N024-09P

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0095Ohm
• Drain-source On-volt: 22V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 49A
• Power Dissipation: 6.5W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 72290
S-41168—Rev. B, 14-Jun-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2000
1600
1200
800
400
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
0
0
−50 −25
0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
T
C
= 30 A
C
rss
= 10 V
= −55_C
10
4
V
T
0
DS
J
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
I
Transconductance
D
25
− Drain Current (A)
Capacitance
20
8
50
C
C
oss
iss
75
30
12
100
125
40
16
125_C
25_C
150
175
50
20
0.030
0.025
0.020
0.015
0.010
0.005
0.000
100
10
10
1
8
6
4
2
0
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 50 A
T
On-Resistance vs. Drain Current
= 10 V
J
V
0.3
V
20
4
= 150_C
GS
SD
Q
= 4.5 V
g
− Source-to-Drain Voltage (V)
I
D
− Total Gate Charge (nC)
− Drain Current (A)
SUD50N024-09P
Gate Charge
40
0.6
8
Vishay Siliconix
60
12
0.9
T
V
J
GS
= 25_C
= 10 V
www.vishay.com
80
16
1.2
100
20
1.5
3