DT28F160F3T95 Intel, DT28F160F3T95 Datasheet - Page 31

• Manufacturer Part Number: DT28F160F3T95
• Manufacturer: Intel

Specifications of DT28F160F3T95

• Density: 16Mb
• Access Time (max): 95ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 20b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SSOP
• Sync/async: Async/Sync
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 1M
• Supply Current: 60mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

6.0
7.0
7.1
7.2
7.3
PRELIMINARY
V
Intel 3 Volt Fast Boot Block Flash memory provides in-system programming and erase at 3.0 V–
3.6 V. For customers requiring fast programming in their manufacturing environment, this family
of products includes an additional high-performance 12 V programming feature.
The 12 V V
found in manufacturing processes; however, it is not intended for extended use. 12 V may be
applied to V
main blocks and 2500 cycles on the parameter blocks. V
80 hours maximum. Stressing the device beyond these limits may cause permanent damage.
Power Consumption
While in operation, the flash device consumes active power. However, Intel
power savings that can significantly reduce overall system power consumption. The Automatic
Power Savings (APS) feature reduces power consumption when the device is idle. When CE# is
not asserted, the flash enters its standby mode, where current consumption is even lower. The
combination of these features minimizes overall memory power and system power consumption.
Active Power
With CE# at a logic-low level and RST# at a logic-high level, the device is in active mode. Active
power is the largest contributor to overall system power consumption. Minimizing active current
has a profound effect on system power consumption, especially for battery-operated devices.
Automatic Power Savings
Automatic Power Savings (APS) provides low-power operation during active mode, allowing the
flash to put itself into a low current state when not being accessed. After data is read from the
memory array, the device’s power consumption enters the APS mode where typical I
comparable to I
read.
Standby Power
With CE# at a logic-high level (V
mode, which disables much of the device’s circuitry and substantially reduces power consumption.
Outputs (DQ
signal. If CE# transitions to a logic-high level during erase or program operations, the device will
continue to perform the operation and consume corresponding active power until the operation is
completed.
PP
Voltages
PP
PP
0
–DQ
mode enhances programming performance during short period of time typically
during block erase and program operations for a maximum of 1000 cycles on the
CCS
15
. The flash stays in this static state with outputs valid until a new location is
) are placed in a high-impedance state independent of the status of the OE#
IH
) and the CUI in read mode, the flash memory is in standby
PP
may be connected to 12 V for a total of
28F800F3—Automotive
®
Flash devices have
CC
current is
25