BF904WR NXP Semiconductors, BF904WR Datasheet - Page 3

• Manufacturer Part Number: BF904WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF904WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.5@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.3@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 280mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
2010 Sep 15
V
I
I
I
P
T
T
D
G1
G2
SYMBOL
stg
j
DS
tot
N-channel dual-gate MOS-FET
handbook, halfpage
(mW)
P tot
300
200
100
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
Fig.2 Power derating curve.
50
PARAMETER
100
150
T
amb
MLD150
( C)
o
up to T
note 1
200
amb
3
CONDITIONS
= 50 C; see Fig.2;





65

MIN.
7
30
10
10
280
+150
+150
Product specification
MAX.
BF904WR
V
mA
mA
mA
mW
C
C
UNIT