BF904WR NXP Semiconductors, BF904WR Datasheet - Page 9

• Manufacturer Part Number: BF904WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF904WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.5@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.3@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 280mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 15
N-channel dual-gate MOS-FET
R GEN
50
V I
Ω
50
R2
Ω
Fig.19 Cross-modulation test set-up.
4.7 nF
C2
V GG
10 k Ω
R1
R G1
V AGC
4.7 nF
9
C1
DUT
V DS
≈
4.7 nF
L1
C3
450 nH
C4
12 pF
MLD171
R L
50 Ω
Product specification
BF904WR