BF904WR NXP Semiconductors, BF904WR Datasheet - Page 5

• Manufacturer Part Number: BF904WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF904WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.5@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.3@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 280mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 15
handbook, halfpage
N-channel dual-gate MOS-FET
(dB V)
V
f
Fig.5
unw
Fig.3
V unw
GG
(mS)
Y fs
μ
= 60 MHz; T
= 5 V; f
120
110
100
40
30
20
10
90
80
0
50
0
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.19.
Forward transfer admittance as a function
of junction temperature; typical values.
w
= 50 MHz.
amb
10
= 25 C; R
0
20
G1
50
= 120 k
30
gain reduction (dB)
100
40
T ( C)
j
MRA771
MLD268
o
150
50
5
handbook, halfpage
reduction
f = 50 MHz.
T
V
T
j
j
DS
gain
(dB)
= 25 C.
= 25 C.
Fig.4
(mA)
= 5 V.
Fig.6 Transfer characteristics; typical values.
I D
20
15
10
10
20
30
40
50
5
0
0
0
0
Typical gain reduction as a function of
AGC voltage.
0.4
1
0.8
V
G2 S
2
1.2
= 4 V
Product specification
BF904WR
3 V
3
1.6
V
V
AGC
G1 S
MRA769
2.5 V
2 V
1.5 V
1 V
MLD270
(V)
(V)
2.0
4