BF904WR NXP Semiconductors, BF904WR Datasheet - Page 8

• Manufacturer Part Number: BF904WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF904WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.5@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.3@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 280mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 15
handbook, halfpage
N-channel dual-gate MOS-FET
V
I
V
I
D
D
(mS)
Fig.15 Input admittance as a function of frequency;
DS
DS
Fig.17 Forward transfer admittance and phase as
(mS)
y fs
= 10 mA; T
= 10 mA; T
y is
10
10
10
10
= 5 V; V
= 5 V; V
10
1
1
2
2
1
10
10
typical values.
a function of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
y fs
ϕ
b is
g is
fs
f (MHz)
f (MHz)
MLD279
MLD277
10
10
3
3
10
10
1
(deg)
ϕ
2
fs
8
handbook, halfpage
V
I
V
I
D
D
(μS)
DS
Fig.16 Reverse transfer admittance and phase as
DS
(mS)
y rs
=10 mA; T
= 10 mA; T
y os
10
10
10
10
10
= 5 V; V
= 5 V; V
10
1
1
3
2
Fig.18 Output admittance as a function of
1
2
10
10
a function of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
frequency; typical values.
= 25 C.
10
10
2
ϕ
2
y rs
b os
g os
rs
f (MHz)
f (MHz)
Product specification
BF904WR
MLD278
MLD280
10
10
3
3
10
10
10
1
(deg)
ϕ
3
rs
2