BF904WR NXP Semiconductors, BF904WR Datasheet - Page 6

• Manufacturer Part Number: BF904WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF904WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.5@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.3@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 280mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 15
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FET
V
T
V
T
G2-S
j
DS
j
(mS)
(mA)
= 25 C.
y fs
= 25 C.
I D
Fig.9
= 5 V.
Fig.7 Output characteristics; typical values.
20
16
12
40
30
20
10
= 4 V.
8
4
0
0
0
0
Forward transfer admittance as a
function of drain current; typical values.
2
4
4
8
V
G1 S
1.3 V
1.2 V
1.0 V
1.1 V
0.9 V
= 1.4 V
12
6
V
G2 S
16
8
V
I
D
DS
2 V
3.5 V
3 V
2.5 V
= 4 V
MLD269
MLD272
(mA)
(V)
10
20
6
handbook, halfpage
handbook, halfpage
V
T
V
T
Fig.10 Drain current as a function of gate 1 current;
j
j
DS
DS
(mA)
(μA)
= 25 C.
= 25 C.
I G1
I D
150
100
= 5 V.
= 5 V; V
Fig.8
50
16
12
0
8
4
0
0
0
typical values.
G2-S
Gate 1 current as a function of gate 1
voltage; typical values.
= 4 V.
0.5
10
1.0
20
1.5
30
V
G2 S
Product specification
2.0
BF904WR
40
= 4 V
V
3.5 V
3 V
2.5 V
2 V
G1 S
I
G1
MLD271
MLD273
(μA)
(V)
2.5
50