BLF202 NXP Semiconductors, BLF202 Datasheet - Page 7

• Manufacturer Part Number: BLF202
• Manufacturer: NXP Semiconductors

Specifications of BLF202

• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 1A
• Drain Source Voltage (max): 40V
• Output Power (max): 2W
• Power Gain (typ)@vds: 13@12.5VdB
• Frequency (max): 175MHz
• Package Type: CDIP SMD
• Pin Count: 8
• Forward Transconductance (typ): 0.135S
• Drain Source Resistance (max): 4000@15Vmohm
• Input Capacitance (typ)@vds: 5.3@12.5VpF
• Output Capacitance (typ)@vds: 7.8@12.5VpF
• Reverse Capacitance (typ): 1.8@12.5VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 5700mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, full pagewidth
HF/VHF power MOS transistor
Class-B operation; V
Fig.8
f = 175 MHz.
(dB)
G p
20
16
12
8
4
0
1
Power gain and efficiency as a functions of
load power; typical values.
50
input
1.5
DS
= 12.5 V; I
G p
D
C1
2
DQ
C2
= 20mA; f = 175 MHz.
2.5
L1
R3
R4
Fig.10 Test circuit for class-B operation.
R1
R2
3
P L (W)
C3
C4
MGP116
L2
3.5
100
80
60
40
20
0
(%)
D
D.U.T.
7
handbook, halfpage
L3
Class-B operation; V
Fig.9
C5
C7
MGP118
L5
(W)
P L
4
3
2
1
0
0
R5
L6
Load power as a function of input power;
typical values.
R6
V D
L4
C6
0.2
DS
= 12.5 V; I
C8
C9
0.4
DQ
C11
C10
= 20 mA; f = 175 MHz.
Product specification
0.6
P IN (W)
BLF202
MGP117
50
output
0.8