BF 2030 E6327 Infineon Technologies, BF 2030 E6327 Datasheet - Page 2

• Manufacturer Part Number: BF 2030 E6327
• Manufacturer: Infineon Technologies

Specifications of BF 2030 E6327

• Channel Type: N
• Channel Mode: Depletion
• Continuous Drain Current: 0.04A
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 23@5VdB
• Noise Figure (max): 2.2dB
• Frequency (max): 1GHz
• Package Type: SOT-143
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.031S
• Input Capacitance (typ)@vds: 2.4@5V@Gate 1pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Thermal Resistance
Parameter
Channel - soldering point
BF2030/ BF2030R
BF2030W
Electrical Characteristics at T
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate1-source breakdown voltage
+I
Gate2-source breakdown voltage
+I
Gate1-source leakage current
V
Gate2-source leakage current
V
Drain current
V
Drain-source current
V
Gate1-source pinch-off voltage
V
Gate2-source pinch-off voltage
V
1
D
For calculation of R thJA please refer to Application Note Thermal Resistance
G1S
G2S
DS
DS
DS
DS
G1S
G2S
= 20 µA, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, I
= 5 V, V
= 5 V, V
= 10 mA, V
= 10 mA, V
D
G1S
G2S
G2S
G1S
G2S
G1S
= 20 µA
= 0 , V
= 4 V, R
= 4 V, I
= 0 , V
G2S
G1S
= 0 , V
= 0 , V
= 0 , V
= 0 , V
G2S
G2S
D
DS
DS
1)
G1
= 20 µA
= 0
= 0
= 4 V
DS
DS
= 100 k
= 0
A
= 0
= 0
= 25°C, unless otherwise specified
2
Symbol
V
+V
+V
+I
+I
I
I
V
V
DSS
DSX
(BR)DS
G1S(p)
G2S(p)
G1SS
G2SS
Symbol
R
(BR)G1SS
(BR)G2SS
thchs
min.
0.3
0.3
10
6
6
-
-
-
-
Values
Value
typ.
370
280
0.5
0.6
12
-
-
-
-
-
-
max.
15
15
50
50
50
BF2030...
2007-04-20
-
-
-
-
Unit
V
nA
µA
mA
V
Unit
K/W