BF 999 E6327 Infineon Technologies, BF 999 E6327 Datasheet
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Manufacturer Part Number
BF 999 E6327
Description
MOSFET N-CH RF 20V 30MA SOT-23
Manufacturer
Infineon Technologies
Specifications of BF 999 E6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
N-Channel
Frequency
45MHz
Gain
27dB
Voltage - Rated
20V
Current Rating
30mA
Noise Figure
2.1dB
Current - Test
10mA
Voltage - Test
10V
Configuration
Single
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6.5 V
Continuous Drain Current
0.03 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Channel Type
N
Drain Source Voltage (max)
20V
Power Gain (typ)@vds
27@10VdB
Noise Figure (max)
2.1(Typ)dB
Frequency (max)
300MHz
Package Type
SOT-23
Pin Count
3
Forward Transconductance (typ)
0.02S
Input Capacitance (typ)@vds
2.5@10VpF
Output Capacitance (typ)@vds
0.9@10VpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Compliant
Other names
BF999E6327XT SP000010985
Silicon N-Channel MOSFET Triode
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF999
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate-source peak current
Total power dissipation
T
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1
2
Pb-containing package may be available upon special request
For calculation of R thJA please refer to Application Note Thermal Resistance
S
For high-frequency stages up to 300 MHz
Pb-free (RoHS compliant) package
Qualified according AEC Q101
preferably in FM applications
76 °C
Marking
LBs
2)
1=G
1)
2=D
Pin Configuration
3=S
1
Symbol
V
I
P
T
T
Symbol
R
D
stg
ch
DS
tot
I
thchs
-
GSM
-
3
-55 ... 150
-
Value
Value
200
150
20
30
10
370
Package
SOT23
2007-04-20
1
BF999
Unit
V
mA
mA
mW
°C
Unit
K/W
2
Related parts for BF 999 E6327
BF 999 E6327 Summary of contents
Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking BF999 LBs Maximum Ratings Parameter Drain-source voltage ...
Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage µ Gate-source breakdown voltage mA Gate-source leakage current ...
Total power dissipation P 250 mW 150 100 Gate transconductance -0 Output characteristics I tot ...
Gate input capacitance Output capacitance C gss dss 2007-04-20 BF999 ) ...
Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...
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