BF1101WRT NXP Semiconductors, BF1101WRT Datasheet - Page 5

• Manufacturer Part Number: BF1101WRT
• Manufacturer: NXP Semiconductors

Specifications of BF1101WRT

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.6@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.2@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
1999 May 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
T
V
T
DS
j
DS
j
= 25 C.
= 25 C.
(mA)
(μA)
I G1
I D
= 5 V.
Fig.5 Transfer characteristics; typical values.
= 5 V.
100
Fig.7
80
60
40
20
20
16
12
0
8
4
0
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
0.5
0.4
0.8
1
V G2-S = 4 V
1.5
1.2
V G2-S = 4 V
3.5 V
V G1-S (V)
V G1-S (V)
1.6
3.5 V
2
3 V
2.5 V
2 V
MGS301
MGS299
1.5 V
2.5 V
3 V
1 V
2 V
2.5
2
5
handbook, halfpage
handbook, halfpage
V
T
V
T
j
G2-S
(mS)
DS
j
= 25 C.
(mA)
= 25 C.
y fs
Fig.8
I D
= 5 V.
Fig.6 Output characteristics; typical values.
40
30
20
10
20
16
12
= 4 V.
0
8
4
0
BF1101; BF1101R; BF1101WR
0
0
Forward transfer admittance as a
function of drain current; typical values.
4
2
8
V G1-S = 1.6 V
4
1.5 V
1.4 V
1.2 V
1.1 V
1.3 V
12
1 V
Product specification
V G2-S = 4 V
6
16
V DS (V)
2 V
2.5 V
I D (mA)
MGS302
MGS300
3.5 V
3 V
20
8