BF1101WRT NXP Semiconductors, BF1101WRT Datasheet - Page 7

• Manufacturer Part Number: BF1101WRT
• Manufacturer: NXP Semiconductors

Specifications of BF1101WRT

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.6@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.2@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
1999 May 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
R
Fig.15 Unwanted voltage for 1% cross-modulation
V
(1) R
DS
(dBμV)
G1
V unw
DS
(μA)
I G1
Fig.13 Gate 1 current as a function of gate 2
= 5 V; T
= 120 k (connected to V
120
110
100
= 5 V; V
40
30
20
10
90
80
G1
0
0
0
= 68 k.
as a function of gain reduction;
typical values; see Fig.21.
j
GG
= 25 C.
voltage; typical values.
= 5 V; f = 50 MHz; f
10
(1)
(2) R
(2)
2
G1
20
GG
= 120 k.
(3)
); see Fig.21.
unw
30
= 60 MHz; T
gain reduction (dB)
4
(3) R
V GG = 5 V
V G2-S (V)
40
G1
amb
= 180 k.
4.5 V
4 V
3 V
3.5 V
MGS307
MGS309
= 25 C.
50
6
7
handbook, halfpage
handbook, halfpage
reduction
Fig.16 Drain current as a function of gain reduction;
V
(1) R
V
(1) R
gain
(dB)
DS
DS
(mA)
I D
−10
−20
−30
−40
−50
Fig.14 Typical gain reduction as a function of
= 5 V; V
= 5 V; V
25
20
15
10
G1
G1
5
0
0
BF1101; BF1101R; BF1101WR
0
0
= 68 k.
= 68 k.
typical values; see Fig.21.
GG
GG
the AGC voltage; see Fig.21.
= 5 V; f = 50 MHz; T
= 5 V; f = 50 MHz; T
10
(2) R
(2) R
1
(1)
(2)
(3)
G1
G1
20
= 120 k.
= 120 k.
(3)
2
amb
amb
(2)
30
= 25 C.
= 25 C.
gain reduction (dB)
(1)
(3) R
(3) R
Product specification
3
40
V AGC (V)
G1
G1
= 180 k.
= 180 k.
MGS308
MGS310
50
4