BF1101WRT NXP Semiconductors, BF1101WRT Datasheet - Page 6

• Manufacturer Part Number: BF1101WRT
• Manufacturer: NXP Semiconductors

Specifications of BF1101WRT

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.6@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.2@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
1999 May 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
V
T
Fig.11 Drain current as a function of gate 1 (= V
Fig.9
V
R
DS
G2-S
j
G2-S
(mA)
= 25 C.
(mA)
G1
I D
I D
= 5 V.
connected to V
20
16
12
20
16
12
= 4 V.
= 4 V; T
8
4
0
8
4
0
0
0
and drain supply voltage; typical values.
Drain current as a function of gate 1 current;
typical values.
j
= 25 C.
10
GG
2
R G1 = 47 kΩ 68 kΩ
; see Fig.21.
20
4
30
V GG = V DS (V)
6
40
I G1 (μA)
82 kΩ
MGS303
MGS305
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
50
8
GG
)
6
handbook, halfpage
handbook, halfpage
V
R
Fig.12 Drain current as a function of gate 2 voltage;
V
R
DS
G1
DS
G1
(mA)
(mA)
I D
Fig.10 Drain current as a function of gate 1
= 5 V; T
= 120 k (connected to V
I D
= 5 V; V
= 120 k (connected to V
16
12
15
10
8
4
0
5
0
BF1101; BF1101R; BF1101WR
0
0
typical values.
j
G2-S
= 25 C.
supply voltage (= V
= 4 V; T
1
j
2
= 25 C.
2
GG
GG
); see Fig.21.
); see Fig.21.
3
GG
4
); typical values.
Product specification
V GG = 5 V
V G2-S (V)
4
V GG (V)
4.5 V
4 V
3.5 V
3 V
MGS304
MGS306
6
5