MT46V32M16BN-6:FTR Micron Technology Inc, MT46V32M16BN-6:FTR Datasheet - Page 26

• Manufacturer Part Number: MT46V32M16BN-6:FTR
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M16BN-6:FTR

• Lead Free Status / Rohs Status: Compliant

Table 19:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
AC Characteristics
Parameter
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ command
Exit SELF REFRESH-to-READ command
Data valid output window
Electrical Characteristics and Recommended AC Operating Conditions (-6) (continued)
Notes: 1–6, 16–18, 34 apply to the entire table; Notes appear on page 35;
0°C ≤ T
A
≤ +70°C; V
DD
Q = +2.5V ±0.2V, V
DD
= +2.5V ±0.2V
26
Symbol
t
WPRES
t
t
t
t
WPST
XSNR
XSRD
t
WTR
n/a
WR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
512Mb: x4, x8, x16 DDR SDRAM
Min
200
0.4
15
75
0
1
t
QH -
-6 (FBGA)
t
DQSQ
Max
0.6
–
–
–
–
–
©2000 Micron Technology, Inc. All rights reserved.
Units
t
t
t
ns
CK
ns
CK
ns
CK
ns
Notes
21, 22
20
26