TIM1414-7 Toshiba, TIM1414-7 Datasheet
TIM1414-7
Manufacturer Part Number
TIM1414-7
Description
Manufacturer
Toshiba
Datasheet
1.TIM1414-7.pdf
(4 pages)
Specifications of TIM1414-7
Configuration
Single
Gate-source Voltage (max)
5V
Pin Count
3
Drain-source Volt (max)
15V
Operating Temperature (min)
-65C
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Mounting
Screw
Continuous Drain Current
5.7A
Package Type
2-9D1B
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TIM1414-7
Manufacturer:
TOSHIBA
Quantity:
5 000
Company:
Part Number:
TIM1414-7-252
Manufacturer:
TOSHIBA
Quantity:
5 000
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Power Added Efficiency
Channel Temperature Rise
Recommended gate resistance(Rg) : Rg= 150 Ω ( MAX.)
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
HIGH POWER
P1dB=38.5 dBm at 14.0 GHz to 14.5 GHz
HIGH GAIN
G1dB=6.5 dB at 14.0 GHz to 14.5 GHz
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
I
η
th(c-c)
GSoff
DS1
DSS
gm
GSO
1dB
1dB
add
(VDS X IDS + Pin – P1dB)
f= 14.0 to 14.5GHz
V
I
V
I
V
V
I
Channel to Case
DS
DS
GS
DS
DS
DS
GS
CONDITIONS
CONDITIONS
= 2.4 A
= 72mA
= -72μA
= 3V
=
=
= 0V
VDS= 9V
X Rth(c-c)
3V
3V
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1414-7
UNIT
UNIT
° C/W
dBm
mS
dB
° C
%
A
V
A
V
MIN.
37.5
MIN.
-1.5
5.5
⎯
⎯
⎯
⎯
⎯
⎯
-5
TYP. MAX.
38.5
2.25
Rev. Jul. 2006
TYP. MAX.
1500
6.5
-3.0
27
5.0
3.0
⎯
⎯
2.75
80
-4.5
⎯
⎯
⎯
3.7
⎯
⎯
⎯
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TIM1414-7 Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM1414-7 BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...
Page 2
... CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-9D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM1414-7 SYMBOL UNIT ° ...
Page 3
... RF PERFORMANCE Output Power (Pout) vs. Frequency V =9V DS ≅2.25A Pin=32.0 dBm Output Power(Pout) vs. Input Power(Pin) 41 freq.=14.5GHz 40 V =9V DS ≅2.25A TIM1414-7 14.0 14.25 Frequency(GHz) Pout ηadd 29 31 Pin(dBm ...
Page 4
... Power Dissipation(PT) vs. Case Temperature(Tc TIM1414-7 80 120 Tc( ° 160 200 ...