GMR C6 Infineon Technologies, GMR C6 Datasheet - Page 3

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GMR C6

Manufacturer Part Number
GMR C6
Description
SENSOR POSITION ANGLED GMR
Manufacturer
Infineon Technologies
Datasheet

Specifications of GMR C6

Lead Free Status / Rohs Status
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Other names
GMRC6INTR
Data Sheet
Maximum Ratings
Parameter
Operating temperature
Storage temperature
Supply voltage
Thermal conductivity
Magnetic field
1)
Characteristics (
Parameter
Nominal supply voltage
Basic resistance
Magnetoresistive effect
H
Output signal halfbridge
Offset voltage per halfbridge
Temperature coefficient of
basic resistance
Temperature coefficient of
magnetoresistance
Temperature coefficient of
magnetoresistive effect
Application Hints
The application mode of the GMR position sensor is preferably as a bridge or halfbridge
circuit. This circuit compensates for the
for the
and can be done for example with a NIC circuit. When operated over a complete 360
turn, two total signals of
case of linear position sensing, the electrical circuit remains unchanged, also providing
two phaseshifted signals (i.e.sine and cosine).
rot
larger fields may reduce the magnetoresistive effect irreversibly
= 5 ... 15 kA/m
T
C
of the GMR effect
1)
T
A
= 25 C)
@
@
20 mV/V are achieved at 25 C with two halfbridges. In the
R
V
V
/
1N
1N
R
0
= 5 V
= 5 V
, if there is the necessity, is left to the application circuit
Symbol
T
T
V
G
H
Symbol
V
R
V
|
TC
TC
TC
T
V
A
stg
R
1
1N
0
OUT
C
thC
rot
0
3
/
|
R0
of the resistance value
R
R
R/R0
A
0
Value
– 40 … + 150
– 50 … + 150
7
> 4
< 15
Value
5
> 700
> 4
> 100
< 8
+ 0.09 … + 0.12
– 0.12 … – 0.09
– 0.27 … – 0.23
R
0
. To compensate
2000-07-01
GMR C6
Unit
V
mW/K
kA/m
Unit
V
%
mV
mV
%/K
%/K
%/K
C
C

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