MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 23

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

READ Operations
PAGE READ 00h-30h
Figure 18:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
WE#
R/B#
ALE
I/Ox
CE#
RE#
CLE
00h
PAGE READ Operation
On initial power up, each device defaults to read mode. To enter the read mode while in
operation, write the 00h-30h command sequence to the command register along with
the five ADDRESS cycles.
Writing 00h to the command register starts the ADDRESS LATCH cycle. Five ADDRESS
cycles are input next. Finally the 30h command is loaded into the command register.
While monitoring the read status to determine when the
data register) is complete, the user must re-issue the READ (00h) command to make the
change from STATUS to DATA. (See Figure 44 on page 48 and Figure 45 on page 49 for
examples.) After the READ command has been re-issued, pulsing the RE# line will result
in outputting data, starting from the initial column address.
A serial page read sequence outputs a complete page of data. After 30h is written, the
page data is transferred to the data register, and R/B# goes LOW during the transfer.
When the transfer to the data register is complete, R/B# returns HIGH. At this point, data
can be read from the device. Starting from the initial column address to the end of the
page, read the data by repeatedly pulsing RE# at the maximum
on page 23.)
Address (5 Cycles)
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
23
30h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
R
t
R (transfer from Flash array to
Command Definitions
Data Output (Serial Access)
©2004 Micron Technology, Inc. All rights reserved.
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RC rate. (See Figure 18
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