ATF-54143 Agilent Technologies, Inc., ATF-54143 Datasheet

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ATF-54143

Manufacturer Part Number
ATF-54143
Description
LOW NOISE ENHANCEMENT MODE PSEUDOMORPHIC HEMT
Manufacturer
Agilent Technologies, Inc.
Datasheet

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Description
Agilent ATF-54143 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Surface Mount Plastic Package
Data Sheet
Surface Mount Package
SOT-343
Pin Connections and
Package Marking
SOURCE
Note:
Top View. Package marking provides orientation
and identification
“4F” = Device Code
“x” = Date code character
identifies month of manufacture.
DRAIN
SOURCE
GATE
Features
• High linearity performance
• Enhancement Mode Technology
• Low noise figure
• Excellent uniformity in product
• 800 micron gate width
• Low cost surface mount small
• Tape-and-Reel packaging option
Specifications
2 GHz; 3 V, 60 mA (Typ.)
• 36.2 dBm output 3
• 20.4 dBm output power at 1 dB
• 0.5 dB noise figure
• 16.6 dB associated gain
Applications
• Low noise amplifier for cellular/
• LNA for WLAN, WLL/RLL and
• General purpose discrete E-PHEMT
Note:
1. Enhancement mode technology requires
specifications
plastic package SOT-343 (4 lead
SC-70)
available
gain compression
PCS base stations
MMDS applications
for other ultra low noise applications
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.
rd
order intercept
[1]

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ATF-54143 Summary of contents

Page 1

... Description Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Surface Mount Package SOT-343 Pin Connections and Package Marking DRAIN SOURCE SOURCE GATE Note: Top View. Package marking provides orientation and identification “4F” = Device Code “ ...

Page 2

... ATF-54143 Absolute Maximum Ratings Symbol Parameter [2] V Drain - Source Voltage DS [2] V Gate - Source Voltage GS [2] V Gate Drain Voltage GD [2] I Drain Current DS [3] P Total Power Dissipation diss P RF Input Power in max. I Gate Source Current GS T Channel Temperature CH T Storage Temperature STG [4] Thermal Resistance ...

Page 3

... ATF-54143 Electrical Specifications parameters measured in a test circuit for a typical device A Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth Threshold Voltage Idss Saturated Drain Current Gm Transconductance Igss Gate Leakage Current [1] NF Noise Figure [1] Ga Associated Gain rd OIP3 Output 3 Order ...

Page 4

... ATF-54143 Typical Performance Curves 0.7 0.6 0.5 0.4 3V 0 100 I (mA) d Figure 6. Fmin vs. I and V Tuned for ds ds Max OIP3 and Fmin at 2 GHz 100 I (mA) ds Figure 9. Gain vs. I and V Tuned for ds ds Max OIP3 and Fmin at 900 MHz 100 ...

Page 5

... FREQUENCY (GHz) [1] Figure 18. Fmin vs. Frequency and 3V. ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3 3V [1] Freq Out_Mag. (GHz) (Mag) (Degrees) 0.9 0.017 115 2.0 0.026 -85 3.9 0.013 173 5.8 0.025 102 Note: 1. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device. ...

Page 6

... ATF-54143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.99 -17.6 27.99 0.5 0.83 -76.9 25.47 0.9 0.72 -114 22.52 1.0 0.70 -120.6 21.86 1.5 0.65 -146.5 19.09 1.9 0.63 -162.1 17.38 2.0 0.62 -165.6 17.00 2.5 0.61 178.5 15.33 3.0 ...

Page 7

... ATF-54143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.99 -18.9 28.84 0.5 0.81 -80.8 26.04 0.9 0.71 -117.9 22.93 1.0 0.69 -124.4 22.24 1.5 0.64 -149.8 19.40 1.9 0.62 -164.9 17.66 2.0 0.62 -168.3 17.28 2.5 0.60 176.2 15.58 3.0 ...

Page 8

... ATF-54143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.98 -20.4 28.32 0.5 0.80 -85.9 25.32 0.9 0.72 -123.4 22.10 1.0 0.70 -129.9 21.40 1.5 0.66 -154.6 18.55 1.9 0.65 -169.5 16.81 2.0 0.64 -172.8 16.42 2.5 0.64 172.1 14.69 3.0 ...

Page 9

... ATF-54143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.99 -18.6 28.88 0.5 0.81 -80.2 26.11 0.9 0.71 -117.3 23.01 1.0 0.69 -123.8 22.33 1.5 0.64 -149.2 19.49 1.9 0.62 -164.5 17.75 2.0 0.61 -167.8 17.36 2.5 0.60 176.6 15.66 3.0 ...

Page 10

... ATF-54143 Applications Information Introduction Matching Networks 10 C4 OUTPUT C1 INPUT Vdd Figure 1. Typical ATF-54143 LNA with Passive Biasing. Bias Networks Passive Biasing ...

Page 11

... Active Biasing 11 C4 OUTPUT C1 INPUT Figure 2. Typical ATF-54143 LNA with Active Biasing. Vdd ...

Page 12

... Tau= Rgd=0.25 Ohm Tnom=16.85 Rd=1.0125 Ohm Idstc= Ucrit=-0.72 Rg=1.0 Ohm Vgexp=1.91 Rs=0.3375 Ohm Gamds=1e-4 Ld= Vtotc= Lg=0.18 nH Betatce= Ls= Rgs=0.25 Ohm Cds=0.27 pF Rc=250 Ohm ATF-54143 curtice ADS Model INSIDE Package VAR Var Egn VAR1 K=5 Z2=85 Z1= GATE C=0.13 pF Port TLINP TLINP G TL4 ...

Page 13

... Rho=1.0 W=40.0 mil SOURCE VIA2 V2 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil Figure 3. Adding Vias to the ATF-54143 Non-Linear Model for Comparison to Measured S and Noise Parameters. 13 For Further Information VIA2 V3 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 SOURCE W=40.0 mil ...

Page 14

Noise Parameter Applications Information – | min (| Where the normalized n o noise ...

Page 15

... Ordering Information Part Number No. of Devices ATF-54143-TR1 3000 ATF-54143-TR2 10000 ATF-54143-BLK 100 Package Dimensions Outline 43 SOT-343 (SC70 4-lead) 1.30 (0.051) BSC E E1 1.15 (.045) BSC TYP DIMENSIONS SYMBOL MIN. MAX. A 0.80 (0.031) 1.00 (0.039 (0) 0.10 (0.004) b 0.25 (0.010) 0.35 (0.014) C 0.10 (0.004) ...

Page 16

... DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE THICKNESS DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies, Inc. Obsoletes 5988-0450EN May 31, 2001 5988-2722EN TOP VIEW (CARRIER TAPE THICKNESS MAX ...

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