BGD812,112 NXP Semiconductors, BGD812,112 Datasheet - Page 2

• Manufacturer Part Number: BGD812,112
• Description: AMP GAIN POWER 860MHZ SOT115J
• Manufacturer: NXP Semiconductors
• Type: General Purpose Amplifierr

Specifications of BGD812,112

• Operating Frequency: 870 MHz
• Operating Supply Voltage: 24 V
• Supply Current: 410 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-115
• Number Of Channels: 1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055918112::BGD812::BGD812

NXP Semiconductors
FEATURES
 Excellent linearity
 Extremely low noise
 Excellent return loss properties
 Silicon nitride passivation
 Rugged construction
 Gold metallization ensures excellent reliability.
APPLICATIONS
 CATV systems operating in the 40 to 870 MHz
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Oct 30
G
I
V
V
T
T
tot
frequency range.
SYMBOL
SYMBOL
stg
mb
B
i
860 MHz, 18.5 dB gain power doubler
amplifier
p
power gain
total current consumption (DC)
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
PARAMETER
f = 45 MHz
f = 870 MHz
V
B
= 24 V
2
PINNING - SOT115J
handbook, halfpage
CONDITIONS
PIN
2, 3
7, 8
1
5
9
Side view
Fig.1 Simplified outline.
1
2
18.2
19
380


40
20
3
MIN.
MIN.
5
input
common
+V
common
output
7
8
B
9
Product specification
DESCRIPTION
18.8
20
410
30
70
+100
+100
MSA319
MAX.
MAX.
BGD812
dB
dB
mA
V
dBmV
C
C
UNIT
UNIT