BGD812,112 NXP Semiconductors, BGD812,112 Datasheet - Page 6

• Manufacturer Part Number: BGD812,112
• Description: AMP GAIN POWER 860MHZ SOT115J
• Manufacturer: NXP Semiconductors
• Type: General Purpose Amplifierr

Specifications of BGD812,112

• Operating Frequency: 870 MHz
• Operating Supply Voltage: 24 V
• Supply Current: 410 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-115
• Number Of Channels: 1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055918112::BGD812::BGD812

NXP Semiconductors
2001 Oct 30
handbook, halfpage
handbook, halfpage
860 MHz, 18.5 dB gain power doubler
amplifier
Z
(1) V
(2)
Fig.5
Z
(1) V
(2)
Fig.7
S
S
CSO
CTB
(dB)
(dB)
= Z
= Z
−40
−50
−60
−70
−80
−50
−60
−70
−80
−90
Typ. +3 .
Typ. +3 .
o
o
L
L
.
.
= 75 ; V
= 75 ; V
0
0
Composite second order distortion as a
Composite triple beat as a function of
frequency under tilted conditions.
function of frequency under tilted
conditions.
200
200
B
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(3)
(4) Typ. 3 .
(3)
(4) Typ. 3 .
Typ.
Typ.
400
400
600
600
800
800
f (MHz)
f (MHz)
(1)
(1)
(2)
(3)
(4)
MLD354
(2)
(3)
(4)
MLD356
1000
1000
(dBmV)
(dBmV)
52
48
44
40
36
52
48
44
40
36
V o
V o
6
handbook, halfpage
Z
(1) V
(2)
Fig.6
X mod
S
(dB)
= Z
−40
−50
−60
−70
−80
Typ. +3 .
o
L
.
0
= 75 ; V
Cross modulation as a function of frequency
under tilted conditions.
200
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(3)
(4) Typ. 3 .
Typ.
400
600
Product specification
800
f (MHz)
(1)
BGD812
(2)
(3)
(4)
MLD355
1000
(dBmV)
52
48
44
40
36
V o