BGD885,112 NXP Semiconductors, BGD885,112 Datasheet

AMP GAIN POWER 860MHZ SOT115D

BGD885,112

Manufacturer Part Number
BGD885,112
Description
AMP GAIN POWER 860MHZ SOT115D
Manufacturer
NXP Semiconductors
Type
General Purpose Amplifierr
Datasheet

Specifications of BGD885,112

Operating Frequency
860 MHz
Noise Figure
8 dB at 860 MHz
Supply Current
450 mA
Maximum Operating Temperature
+ 100 C
Mounting Style
SMD/SMT
Package / Case
SOT-115
Minimum Operating Temperature
- 20 C
Number Of Channels
1 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934005490112::BGD885::BGD885
Product specification
Supersedes data of 2001 Oct 25
dbook, halfpage
DATA SHEET
BGD885
860 MHz, 17 dB gain power
doubler amplifier
DISCRETE SEMICONDUCTORS
M3D248
2001 Nov 02

Related parts for BGD885,112

BGD885,112 Summary of contents

Page 1

DATA SHEET dbook, halfpage BGD885 860 MHz gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 DISCRETE SEMICONDUCTORS M3D248 2001 Nov 02 ...

Page 2

... NXP Semiconductors 860 MHz gain power doubler amplifier FEATURES  Excellent linearity  Extremely low noise  Silicon nitride passivation  Rugged construction  Gold metallization ensures excellent reliability. DESCRIPTION Hybrid amplifier module for CATV/MATV systems operating over a frequency range 860 MHz at a voltage supply (DC) ...

Page 3

... NXP Semiconductors 860 MHz gain power doubler amplifier CHARACTERISTICS Table 1 Bandwidth 40 to 860 MHz; V SYMBOL PARAMETER G power gain p SL slope cable equivalent FL flatness of frequency response S input return losses 11 S output return losses 22 d second order distortion 2 V output voltage o F noise figure ...

Page 4

... NXP Semiconductors 860 MHz gain power doubler amplifier input List of components (see Fig.2) COMPONENT C1 ceramic multilayer capacitor C2 ceramic multilayer capacitor R resistor 2001 Nov 02 BGD885 Fig.2 Test circuit. DESCRIPTION 4 Product specification output MEA094-2 VALUE 1 nF (max  BGD885 ...

Page 5

... NXP Semiconductors 860 MHz gain power doubler amplifier PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes 6-32 UNC and 2 extra horizontal mounting holes; 9 gold-plated in-line leads DIMENSIONS (mm are the original dimensions UNIT b c max. max. max. 0.51 mm 20.8 9.5 ...

Page 6

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 7

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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