BGD885,112 NXP Semiconductors, BGD885,112 Datasheet - Page 4

• Manufacturer Part Number: BGD885,112
• Description: AMP GAIN POWER 860MHZ SOT115D
• Manufacturer: NXP Semiconductors
• Type: General Purpose Amplifierr

Specifications of BGD885,112

• Operating Frequency: 860 MHz
• Noise Figure: 8 dB at 860 MHz
• Supply Current: 450 mA
• Maximum Operating Temperature: + 100 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-115
• Minimum Operating Temperature: - 20 C
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934005490112::BGD885::BGD885

NXP Semiconductors
List of components (see Fig.2)
2001 Nov 02
C1
C2
R
860 MHz, 17 dB gain power doubler
amplifier
COMPONENT
input
ceramic multilayer capacitor
ceramic multilayer capacitor
resistor
1
2
3
10 V
Fig.2 Test circuit.
DESCRIPTION
4
BGD885
5
4
C1
6
7
C2
8
V B = 24 V
9
1 nF (max.)
1 nF
56  2 W
MEA094-2
output
Product specification
VALUE
BGD885