BGD885,112 NXP Semiconductors, BGD885,112 Datasheet - Page 2

• Manufacturer Part Number: BGD885,112
• Description: AMP GAIN POWER 860MHZ SOT115D
• Manufacturer: NXP Semiconductors
• Type: General Purpose Amplifierr

Specifications of BGD885,112

• Operating Frequency: 860 MHz
• Noise Figure: 8 dB at 860 MHz
• Supply Current: 450 mA
• Maximum Operating Temperature: + 100 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-115
• Minimum Operating Temperature: - 20 C
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934005490112::BGD885::BGD885

NXP Semiconductors
FEATURES
 Excellent linearity
 Extremely low noise
 Silicon nitride passivation
 Rugged construction
 Gold metallization ensures excellent reliability.
DESCRIPTION
Hybrid amplifier module for CATV/MATV systems
operating over a frequency range of 40 to 860 MHz at a
voltage supply of 24 V (DC).
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Nov 02
G
I
V
V
T
T
tot
stg
mb
B
i
860 MHz, 17 dB gain power doubler
amplifier
p
SYMBOL
SYMBOL
DC supply voltage
RF input voltage
storage temperature
operating mounting base temperature
power gain
total current consumption (DC)
PARAMETER
PARAMETER
f = 50 MHz
V
B
2
= 24 V
PINNING - SOT115D
handbook, halfpage
2, 3, 5, 6, 7
CONDITIONS
PIN
1
4
8
9
Side view
input
common
10 V, 200 mA supply terminal
+V
output
Fig.1 Simplified outline.
B
1
2
3
4
5
16.5



40
20
DESCRIPTION
6
MIN.
MIN.
7
8
9
Product specification
MBK049
17.5
450
26
65
+100
+100
MAX.
MAX.
BGD885
dB
mA
V
dBmV
C
C
UNIT
UNIT