ATxmega192A3U Atmel Corporation, ATxmega192A3U Datasheet - Page 429

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ATxmega192A3U

Manufacturer Part Number
ATxmega192A3U
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of ATxmega192A3U

Flash (kbytes)
192 Kbytes
Pin Count
64
Max. Operating Frequency
32 MHz
Cpu
8-bit AVR
# Of Touch Channels
16
Hardware Qtouch Acquisition
No
Max I/o Pins
50
Ext Interrupts
50
Usb Transceiver
1
Usb Speed
Full Speed
Usb Interface
Device
Spi
10
Twi (i2c)
2
Uart
7
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
16
Adc Resolution (bits)
12
Adc Speed (ksps)
2000
Analog Comparators
4
Resistive Touch Screen
No
Dac Channels
2
Dac Resolution (bits)
12
Temp. Sensor
Yes
Crypto Engine
AES/DES
Sram (kbytes)
16
Eeprom (bytes)
2048
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
Yes
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.6 to 3.6
Operating Voltage (vcc)
1.6 to 3.6
Fpu
No
Mpu / Mmu
no / no
Timers
7
Output Compare Channels
22
Input Capture Channels
22
Pwm Channels
22
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes

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33.6
33.6.1
33.6.2
8331A–AVR–07/11
Flash and EEPROM Page Buffers
Flash Page Buffer
EEPROM Page Buffer
This ensures that the given command is executed and the operations finished before the start of
a new operation. The external programmer or application software must ensure that the NVM is
not addressed when it is busy with a programming operation.
Programming any part of the NVM will automatically block:
During Self-Programming, interrupts must be disabled or the Interrupt Vector table must be
moved to the Boot Loader Sections as described in
Interrupt Controller” on page
The Flash memory is updated page-by-page. The EEPROM can be updated both byte-by-byte
and page-by-page. Flash and EEPROM page programming is done by first filling the associated
page buffer, and then writing the entire page buffer to a selected page in Flash or EEPROM.
The size of the page and page buffers depend on the Flash and EEPROM size in each device,
and details are described the device’s datasheet.
The Flash page buffer is filled one word at a time, and it must be erased before it can be loaded.
If an already loaded location is written again, this will result in a binary AND between the content
of the page buffer location and the word that is loaded. The content of that Flash page buffer
location will be corrupted.
Page buffer locations that are not loaded will have the value 0xFFFF, and this value will then be
programmed into the corresponding flash page locations.
The page buffer is automatically erased after:
The EEPROM page buffer is filled one byte at a time and it must be erased before it can be
loaded. If an already loaded location is written again, this will result in a binary AND between the
content of the page buffer location and the word that is loaded. The content of that EEPROM
page buffer location will be corrupted.
EEPROM page buffer locations that are loaded will get tagged by the NVM Controller. During a
page write or page erase, only targed locations will be written or erased. Locations that are not
targed, will not be written or erased, and the corresponding EEPROM location will remain
unchanged. This means that before an EEPROM page erase, data must be loaded to the
selected page buffer location to tag them. When performing an EEPROM page erase the actual
value of the tagged location does not matter.
• All programming to other parts of the NVM.
• All loading/erasing of the Flash and EEPROM Page Buffers.
• All NVM read from external programmers.
• All NVM read from the Application Section.
• A device reset.
• Executing the Write Flash Page command.
• Executing the Erase and Write Flash Page command.
• Executing the Signature Row write command.
• Executing the Write Lock Bit command.
132.
Atmel AVR XMEGA AU
”Interrupts and Programmable Multilevel
429

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