SAM3S16C Atmel Corporation, SAM3S16C Datasheet - Page 1114

• Manufacturer Part Number: SAM3S16C
• Manufacturer: Atmel Corporation

Specifications of SAM3S16C

• Flash (kbytes): 1024 Kbytes
• Pin Count: 100
• Max. Operating Frequency: 100 MHz
• Cpu: Cortex-M3
• # Of Touch Channels: 39
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 79
• Ext Interrupts: 79
• Usb Transceiver: 1
• Quadrature Decoder Channels: 2
• Usb Speed: Full Speed
• Usb Interface: Device
• Spi: 3
• Twi (i2c): 2
• Uart: 4
• Ssc: 1
• Sd / Emmc: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 16
• Adc Resolution (bits): 12
• Adc Speed (ksps): 1000
• Analog Comparators: 1
• Resistive Touch Screen: No
• Dac Channels: 2
• Dac Resolution (bits): 12
• Temp. Sensor: Yes
• Crypto Engine: No
• Sram (kbytes): 128
• Self Program Memory: YES
• External Bus Interface: 1
• Dram Memory: No
• Nand Interface: Yes
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.8/3.3
• Operating Voltage (vcc): 1.62 to 3.6
• Fpu: No
• Mpu / Mmu: Yes / No
• Timers: 6
• Output Compare Channels: 6
• Input Capture Channels: 6
• Pwm Channels: 4
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: Yes

46.1.2
46.1.2.1
46.1.3
46.1.3.1
46.1.4
46.1.4.1
46.1.5
46.1.5.1
1072
SAM3S16
Digital-to-Analog Converter (DAC)
Analog Comparator Controller (ACC)
Flash Memory
Power Supplies
DAC: DNL Value
ACC: Selection of the external inputs
FLASH: Flash Erase Issue
Power Supplies: VDDIN greater than VDDIO
The DNL Value (Differential Non Linearity) of the DAC performs at -6/+1 LSB instead of +/-2
LSB.
None.
The analog input pins of the PIO used for the Analog Comparator are not automatically config-
ured in analog mode by the ACC.
Select the inputs by enabling the corresponding ADC Channel through ADC_CHER register.
Performing a Flash erase with the ERASE pin can put the device into an unrecoverable non
functional mode.
Please note that using any software erase commands
(EFC) does not affect the device behavior.
To erase the Flash memory with the ERASE pin, the following sequence must be applied:
After this sequence, the Flash memory can be programmed and GPNVM or lock bits can be pro-
grammed according to the application needs.
Note:
VDDIN voltage can not be greater than VDDIO+0.5V
Apply a voltage on VDDIN lower or equal than VDDIO+0.5V
• Assert the ERASE pin to a high level
• Wait 10 seconds
• Power down and power up the device
Problem Fix/Workaround
Problem Fix/Workaround
Problem Fix/Workaround
Problem Fix/Workaround
1. Erase page and write page:
Erase page and write page then lock
Erase all
Erase Pages
Erase Sector
(1)
from the Embedded Flash Controller
11117B–ATARM–18-Oct-11