SAM3U4E Atmel Corporation, SAM3U4E Datasheet - Page 329
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SAM3U4E
Manufacturer Part Number
SAM3U4E
Description
Manufacturer
Atmel Corporation
Specifications of SAM3U4E
Flash (kbytes)
256 Kbytes
Pin Count
144
Max. Operating Frequency
96 MHz
Cpu
Cortex-M3
# Of Touch Channels
57
Hardware Qtouch Acquisition
No
Max I/o Pins
96
Ext Interrupts
96
Usb Transceiver
1
Quadrature Decoder Channels
1
Usb Speed
Hi-Speed
Usb Interface
Device
Spi
5
Twi (i2c)
2
Uart
5
Ssc
1
Sd / Emmc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
16
Adc Resolution (bits)
12
Adc Speed (ksps)
384
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
50
Self Program Memory
YES
External Bus Interface
1
Dram Memory
No
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
1.62 to 3.6
Fpu
No
Mpu / Mmu
Yes / No
Timers
3
Output Compare Channels
3
Input Capture Channels
3
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
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22.2.5.3
22.2.5.4
6430E–ATARM–29-Aug-11
Flash Full Erase Command
Flash Lock Commands
Table 22-7.
The Flash command Write Page and Lock (WPL) is equivalent to the Flash Write Command.
However, the lock bit is automatically set at the end of the Flash write operation. As a lock region
is composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
The Flash command Erase Page and Write (EWP) is equivalent to the Flash Write Command.
However, before programming the load buffer, the page is erased.
The Flash command Erase Page and Write the Lock (EWPL) combines EWP and WPL
commands.
This command is used to erase the Flash memory planes.
All lock regions must be unlocked before the Full Erase command by using the CLB command.
Otherwise, the erase command is aborted and no page is erased.
Table 22-8.
Lock bits can be set using WPL or EWPL commands. They can also be set by using the Set
Lock command (SLB). With this command, several lock bits can be activated. A Bit Mask is pro-
vided as argument to the command. When bit 0 of the bit mask is set, then the first lock bit is
activated.
Likewise, the Clear Lock command (CLB) is used to clear lock bits.
Table 22-9.
Step
n+2
n+3
...
Step
1
2
Step
1
2
Handshake Sequence
Write handshaking
Write handshaking
...
Handshake Sequence
Write handshaking
Write handshaking
Handshake Sequence
Write handshaking
Write handshaking
Write Command (Continued)
Full Erase Command
Set and Clear Lock Bit Command
...
MODE[3:0]
DATA
DATA
MODE[3:0]
CMDE
DATA
MODE[3:0]
CMDE
DATA
DATA[15:0]
*Memory Address++
*Memory Address++
...
DATA[15:0]
EA
0
DATA[15:0]
SLB or CLB
Bit Mask
SAM3U Series
329
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