BT168GW NXP Semiconductors, BT168GW Datasheet - Page 2

• Manufacturer Part Number: BT168GW
• Description: Passivated, sensitive gate thyristor in a SOT223 plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BT168GW
Product data sheet
Symbol
V
I
I
I
I
dI
I
V
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
RGM
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/s.
P
(W)
, V
tot
0.8
0.6
0.4
0.2
RRM
1
0
0
a = form factor = I
Total power dissipation as a function of average on-state current; maximum values
Limiting values
Parameter
repetitive peak off-state voltage
average on-state current
RMS on-state current
non-repetitive peak on-state current
I
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate voltage
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
T(RMS)
/I
T(AV)
0.2
.
4
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 21 October 2011
Conditions
half sine wave; T
see
all conduction angles;
see
half sine wave; T
surge; see
t = 10 ms
I
dI
over any 20 ms period
TM
2.8
G
t = 10 ms
t = 8.3 ms
/dt = 100 mA/s
= 2 A; I
Figure 1
Figure 4
Thyristors; logic level for RCD/GFI/LCCB applications
0.4
G
Figure 2
= 10 mA;
and
2.2
j
sp
5
= 25 C prior to
 112 C;
and
1.9
3
conduction
(degrees)
angle
120
180
30
60
90
0.6
factor
form
1.57
[1]
2.8
2.2
1.9
a
4
a =
1.57
Min
-
-
-
-
-
-
-
-
-
-
-
-
40
-
I
T(AV)
BT168GW
(A)
© NXP B.V. 2011. All rights reserved.
Max
600
0.63
1
8
9
0.32
50
1
5
5
2
0.1
+150
125
001aab496
0.8
110
113
116
119
122
125
T
Unit
V
A
A
A
A
A
A/s
A
V
V
W
W
C
C
sp(max)
2
( C)
s
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