BT168GW NXP Semiconductors, BT168GW Datasheet - Page 5

• Manufacturer Part Number: BT168GW
• Description: Passivated, sensitive gate thyristor in a SOT223 plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5.
T
BT168GW
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
t
t
GT
L
H
D
gt
q
j
Fig 7.
T
GT
, I
= 25
V
D
GT(25 C)
R
/dt
V
GT

1.6
1.2
0.8
0.4
C; unless otherwise stated
50
Normalized gate trigger voltage as a function
of junction temperature
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state leakage current V
critical rate of rise of
off-state voltage
gate controlled turn-on
time
circuit commuted turn-off
time
Characteristics
0
50
Conditions
see
V
see
V
Figure 11
R
V
waveform; see
I
dI
V
V
R
V
I
I
T
T
TM
D
D
D
D
DM
D
R
100
GK
GK
G
= 1.2 A
= 10 mA; gate open circuit; see
V
V
R
gate open circuit
/dt = 0.1 A/s
= 12 V; I
= 12 V; I
= 12 V; I
= V
= 67% V
= 35 V; dI
D
D
= 2 A; V
GK
Figure 8
Figure 10
All information provided in this document is subject to legal disclaimers.
= 1 k
= 1 k
= 67 % V
001aab501
T
= 12 V
= V
j
DRM(max)
= 1 k
( C)
DRM(max)
150
T
GT
GT
D
Rev. 5 — 21 October 2011
DRM(max)
TM
= 10 mA; gate open circuit;
= V
DRM(max)
= 0.5 mA; R
= 0.5 mA; R
; V
Figure 12
/dt = 30 A/s; dV
DRM(max)
; T
R
= V
j
; T
= 125 C
Thyristors; logic level for RCD/GFI/LCCB applications
; T
j
RRM(max)
= 125 C; I
j
; I
Fig 8.
= 125 C; exponential
GK
GK
I
G
GT(25 C)
= 10 mA;
I
GT
= 1 k;
= 1 k; see
; T
D
3
2
1
0
/dt = 2 V/s;
j
Figure 7
50
TM
Normalized gate trigger current as a function
of junction temperature
= 125 C;
= 1.6 A;
0
50
-
Min
20
-
-
-
-
0.2
-
500
-
-
BT168GW
25
Typ
50
2
2
1.25
0.5
0.3
0.05
800
2
100
100
© NXP B.V. 2011. All rights reserved.
001aab502
T
j
( C)
200
-
-
-
Max
6
5
1.7
0.8
-
0.1
-
150
V/s
V/s
Unit
A
mA
mA
V
V
V
mA
s
s
5 of 12