CGD1046HI NXP Semiconductors, CGD1046HI Datasheet - Page 4

• Manufacturer Part Number: CGD1046HI
• Description: Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Package outline
Fig 1.
CGD1046HI
Product data sheet
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm 20.8
Package outline SOT115J
VERSION
OUTLINE
SOT115J
max.
A
A 2
U 1
L
B
max.
9.5
A 2
c
0.51
0.38
b
d
0.25 27.2
c
U 2
E
IEC
max.
D
Q
2.04
2.54
d
p
13.75 2.54 5.08 12.7 8.8
max.
E
q
All information provided in this document is subject to legal disclaimers.
JEDEC
e
y
REFERENCES
M
e 1
A
B
Rev. 1 — 30 July 2010
F
F
0
S
min.
L
JEITA
scale
4.15
3.85
5
p
1 GHz, 27 dB gain GaAs high output power doubler
max.
2.4 38.1 25.4 10.2 4.2 44.75
W
10 mm
Q
q
Z
1
q 1
2
3
q 2
e
e 1
S
q 2
q 1
D
5
44.25
U 1
PROJECTION
EUROPEAN
p
7
8.2
7.8
U 2
b
8
y
CGD1046HI
9
UNC
6-32
M
W
B
0.25
w
© NXP B.V. 2010. All rights reserved.
w
x
ISSUE DATE
0.7
x
M
04-02-04
10-06-18
M
B
0.1
SOT115J
y
max.
3.8
Z
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