CGD982HCI NXP Semiconductors, CGD982HCI Datasheet - Page 2

• Manufacturer Part Number: CGD982HCI
• Description: Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
CGD982HCI
Product data sheet
Table 2.
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Pin
1
2, 3
5
7, 8
9
Type number
CGD982HCI
Symbol Parameter
V
V
V
T
T
stg
mb
B
i(RF)
ESD
The ESD pulse of 2000 V corresponds to a class 2 sensitivity level.
supply voltage
RF input voltage
electrostatic discharge voltage
storage temperature
mounting base temperature
Pinning
Ordering information
Limiting values
input
common
+V
common
output
Description
All information provided in this document is subject to legal disclaimers.
-
Package
Name
B
Rev. 1 — 3 March 2011
Description
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2 × 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
1 GHz, 22 dB gain GaAs high output power doubler
Conditions
single tone
Human Body Model (HBM);
According JEDEC standard
22-A114E
Biased; According
IEC61000-4-2
Simplified outline
1 3 5 7
9
CGD982HCI
[1]
Graphic symbol
Min Max
-
-
-
-
−40 +100 °C
−20 +100 °C
© NXP B.V. 2011. All rights reserved.
1
2 3 7 8
30
75
2000 V
1500 V
Version
SOT115J
5
sym095
Unit
V
dBmV
9
2 of 9