CGD982HCI NXP Semiconductors, CGD982HCI Datasheet - Page 4

• Manufacturer Part Number: CGD982HCI
• Description: Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
Bandwidth 40 MHz to 1003 MHz; V
[1]
[2]
[3]
CGD982HCI
Product data sheet
Symbol Parameter
98 PAL D channels
CTB
CSO
Xmod
112 NTSC channels
CTB
CSO
Xmod
79 NTSC channels + 75 digital channels
CTB
CSO
Xmod
CCN
98 PAL D channels with 8 MHz bandwidth per channel; [f = 47 MHz to 862 MHz]; flat V
112 NTSC channels; [f = 45 MHz to 750 MHz]; flat V
79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (−6 dB offset); tilt extrapolated to 13.5 dB
at 1003 MHz.
composite triple beat
composite second-order distortion V
cross modulation
composite triple beat
composite second-order distortion V
cross modulation
composite triple beat
composite second-order distortion V
cross modulation
carrier-to-composite noise
Distortion characteristics
B
= 24 V (DC); Z
All information provided in this document is subject to legal disclaimers.
Conditions
V
V
V
V
V
V
V
V
V
V
o
o
o
o
o
o
o
o
o
o
o
o
o
= 48 dBmV at 862 MHz
= 50 dBmV at 862 MHz
= 48 dBmV at 862 MHz
= 50 dBmV at 862 MHz
= 48 dBmV at 862 MHz
= 50 dBmV at 862 MHz
= 48 dBmV at 750 MHz
= 48 dBmV at 750 MHz
= 48 dBmV at 750 MHz
= 56.4 dBmV at 1003 MHz
= 56.4 dBmV at 1003 MHz
= 56.4 dBmV at 1003 MHz
= 56.4 dBmV at 1003 MHz
o
S
Rev. 1 — 3 March 2011
till 750 MHz.
= Z
L
= 75
Ω
1 GHz, 22 dB gain GaAs high output power doubler
; T
mb
= 35
°
C; unless otherwise specified.
o
till 862 MHz.
[1]
[1]
[1]
[1]
[1]
[1]
[2]
[2]
[2]
[3]
[3]
[3]
[3]
CGD982HCI
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
−66
−62
−69
−65
−68
−60
−63
−66
−66
−75
−77
−68
57
© NXP B.V. 2011. All rights reserved.
Max Unit
−62
-
−62
-
-
-
-
-
-
-
-
-
-
dBc
dBc
dBc
dBc
dB
dB
dBc
dBc
dB
dBc
dBc
dB
dBc
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