BAT754L NXP Semiconductors, BAT754L Datasheet - Page 2

Three internal (galvanic) isolated silicon epitaxial Schottkybarrier diodes in a SOT363 small SMD plastic package

BAT754L

Manufacturer Part Number
BAT754L
Description
Three internal (galvanic) isolated silicon epitaxial Schottkybarrier diodes in a SOT363 small SMD plastic package
Manufacturer
NXP Semiconductors
Datasheet

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FEATURES
• Very low forward voltage
• Guard ring protected
• Low diode capacitance
• Three independent diodes in a small plastic SMD
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes
• Low power consumption applications (e.g. hand-held
DESCRIPTION
Three internal (galvanic) isolated silicon epitaxial Schottky
barrier diodes in a SOT363 small SMD plastic package.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Jan 18
BAT754L
Per diode
V
I
I
I
T
T
T
SYMBOL
F
FRM
FSM
package.
applications).
stg
j
amb
R
Schottky barrier triple diode
TYPE NUMBER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
L1
2
t
t
p
p
PINNING
< 1 s; δ < 0.5
< 10 ms
Fig.1 Simplified outline (SOT363) and symbol.
PIN
CONDITIONS
1
2
3
4
5
6
Top view
6
1
5
2
anode 1
anode 2
anode 3
cathode 3
cathode 2
cathode 1
4
3
DESCRIPTION
−65
−65
MIN.
6
1
Product data sheet
5
2
BAT754L
MBL256
30
200
300
600
+150
125
+125
MAX.
4
3
V
mA
mA
mA
°C
°C
°C
UNIT

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