BAT754L NXP Semiconductors, BAT754L Datasheet - Page 3

• Manufacturer Part Number: BAT754L
• Description: Three internal (galvanic) isolated silicon epitaxial Schottkybarrier diodes in a SOT363 small SMD plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Refer to SOT363 standard mounting conditions.
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: pulse width = 300 μs; δ = 0.02.
2001 Jan 18
R
Per diode
V
I
C
amb
SYMBOL
SYMBOL
R
F
Schottky barrier triple diode
th j-a
d
= 25 °C; unless otherwise specified.
thermal resistance from junction to ambient
forward voltage
reverse current
diode capacitance
PARAMETER
PARAMETER
3
note 1
note 1; see Fig.2
V
V
R
R
I
I
I
I
I
F
F
F
F
F
= 25 V; note 1; see Fig.3
= 1 V; f = 1 MHz; see Fig.4
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
CONDITIONS
CONDITIONS
200
260
340
420
750
2
10
VALUE
MAX.
416
Product data sheet
BAT754L
mV
mV
mV
mV
mV
μA
pF
UNIT
UNIT
K/W