PMEG2010AEB NXP Semiconductors, PMEG2010AEB Datasheet - Page 3

• Manufacturer Part Number: PMEG2010AEB
• Description: Planar Maximum Efficiency General Application (MEGA)Schottky barrier rectifier with an integrated guard ring forstress protection, encapsulated in a SOD523 (SC-79) ultrasmall plastic SMD package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
THERMAL CHARACTERISTICS
Notes
1. Refer to SOD523 (SC-79) standard mounting conditions.
2. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
3. Solder point of cathode tab.
2003 Dec 03
V
I
I
I
T
T
T
R
R
SYMBOL
SYMBOL
F
FRM
FSM
stg
j
amb
R
20 V, 1 A ultra low V
barrier rectifier in SOD523 package
th(j-a)
th(j-s)
losses P
P
losses P
P
R
R
and I
and I
F(AV)
F(AV)
R
R
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to
ambient
thermal resistance from junction to
soldering point
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
rating will be available on request.
rating will be available on request.
PARAMETER
PARAMETER
F
MEGA Schottky
T
t
t = 8 ms square wave
note 1
note 1
in free air; notes 1 and 2
notes 2 and 3
p
s
≤ 1 ms; δ ≤ 0.5
≤ 55 °C
3
CONDITIONS
CONDITIONS
−
−
−
−
−65
−
−65
MIN.
VALUE
400
PMEG2010AEB
75
20
1.0
3.5
6
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
K/W
V
A
A
A
°C
°C
°C
UNIT