PMEG2010AEB NXP Semiconductors, PMEG2010AEB Datasheet - Page 5

Planar Maximum Efficiency General Application (MEGA)Schottky barrier rectifier with an integrated guard ring forstress protection, encapsulated in a SOD523 (SC-79) ultrasmall plastic SMD package

PMEG2010AEB

Manufacturer Part Number
PMEG2010AEB
Description
Planar Maximum Efficiency General Application (MEGA)Schottky barrier rectifier with an integrated guard ring forstress protection, encapsulated in a SOD523 (SC-79) ultrasmall plastic SMD package
Manufacturer
NXP Semiconductors
Datasheet

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GRAPHICAL DATA
2003 Dec 03
20 V, 1 A ultra low V
barrier rectifier in SOD523 package
(1) T
(2) T
(3) T
Fig.2
f = 1 MHz; T
Fig.4
(mA)
(pF)
C
I
10
F
10
10
d
10
30
25
20
15
10
−1
1
5
0
3
2
amb
amb
amb
0
0
(1)
= 85 °C.
= 25 °C.
= −40 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
(2)
= 25 °C.
0.2
(3)
5
0.4
10
F
MEGA Schottky
0.6
15
V
V
F
R
com001
com002
(V)
(V)
0.8
20
5
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(μA)
I R
10
10
10
10
10
10
−1
amb
amb
amb
1
5
4
3
2
0
= 85 °C.
= 25 °C.
= −40 °C.
Reverse current as a function of reverse
voltage; typical values.
(1)
(2)
(3)
8
PMEG2010AEB
16
Product data sheet
V R (V)
MLE228
24

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