BAS32L NXP Semiconductors, BAS32L Datasheet - Page 4

Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package

BAS32L

Manufacturer Part Number
BAS32L
Description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS32L

Dc
N/A

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NXP Semiconductors
BAS32L
Product data sheet
Fig 1.
Fig 3.
I
FSM
(mA)
(A)
10
300
I
200
100
10
F
10
−1
0
1
2
0
FR4 PCB, standard footprint
Forward current as a function of ambient
temperature; derating curve
1
Based on square wave currents.
T
function of pulse duration; maximum values
Non-repetitive peak forward current as a
j
= 25 °C prior to surge
10
100
10
2
T
amb
10
3
(°C)
All information provided in this document is subject to legal disclaimers.
t
p
(μs)
mbg451
mbg704
200
10
Rev. 7 — 20 January 2011
4
Fig 2.
Fig 4.
(μA)
I
(mA)
R
(1) T
(2) T
(3) T
(1) V
(2) V
(3) V
10
10
600
I
400
200
10
10
F
10
−1
−2
0
1
3
2
0
0
Forward current as a function of forward
voltage
Reverse current as a function of junction
temperature
j
j
j
R
R
R
= 175 °C; typical values
= 25 °C; typical values
= 25 °C; maximum values
= 75 V; maximum values
= 75 V; typical values
= 20 V; typical values
(1)
High-speed switching diode
(1)
100
1
(2)
(2)
T
V
j
F
( ° C)
(V)
© NXP B.V. 2011. All rights reserved.
(3)
(3)
BAS32L
mbg464
mgd006
200
2
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