BAS32L NXP Semiconductors, BAS32L Datasheet - Page 5

Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package

BAS32L

Manufacturer Part Number
BAS32L
Description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS32L

Dc
N/A

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NXP Semiconductors
8. Test information
BAS32L
Product data sheet
Fig 5.
Fig 6.
Fig 7.
R
V = V
(1) I
S
R
S
= 50 Ω
f = 1 MHz; T
Input signal: Reverse pulse rise time t
Oscilloscope: Rise time t
Input signal: Forward pulse rise time t
Diode capacitance as a function of reverse voltage; typical values
Reverse recovery time test circuit and waveforms
Forward recovery voltage test circuit and waveforms
R
R
= 50
I
+ I
= 1 mA
F
Ω
×
R
S
1 kΩ
D.U.T.
j
= 25 °C
450 Ω
I
F
D.U.T.
r
= 0.35 ns
OSCILLOSCOPE
(pF)
C
R
d
1.2
1.0
0.8
0.6
0.4
i
= 50 Ω
0
All information provided in this document is subject to legal disclaimers.
OSCILLOSCOPE
r
r
mga881
= 20 ns; forward current pulse duration t
= 0.6 ns; reverse voltage pulse duration t
SAMPLING
R
i
= 50
Rev. 7 — 20 January 2011
Ω
I
V
R
10
10 %
t
r
t
10 %
r
90 %
input signal
90 %
V
R
input signal
t
(V)
p
t
p
mgd004
p
20
p
≥ 100 ns; duty factor δ ≤ 0.005
= 100 ns; duty factor δ ≤ 0.05
t
t
High-speed switching diode
V
+ I
F
V FR
output signal
output signal
© NXP B.V. 2011. All rights reserved.
BAS32L
t rr
mga882
(1)
t
t
5 of 11

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