BUK6C2R1-55C NXP Semiconductors, BUK6C2R1-55C Datasheet - Page 3

• Manufacturer Part Number: BUK6C2R1-55C
• Description: Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
BUK6C2R1-55C
Product data sheet
Symbol
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
GS
tot
DS(AL)S
Accumulated pulse duration not to exceed 5mins.
-16V accumulated duration not to exceed 168 hrs.
(A)
I
D
250
200
150
100
50
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
All information provided in this document is subject to legal disclaimers.
T
mb
003aaf964
( ° C)
200
Rev. 3 — 18 January 2012
Conditions
T
Pulsed
DC
T
T
see
T
see
T
T
pulsed; t
I
V
D
j
mb
amb
mb
mb
mb
GS
≥ 25 °C; T
= 120 A; V
Figure 1
Figure 3
= 25 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 10 V; T
= 100 °C; V
p
≤ 10 µs; T
j
sup
Fig 2.
≤ 175 °C
j(init)
GS
≤ 55 V; R
GS
P
Figure 2
(%)
= 10 V; see
= 25 °C; unclamped
der
120
N-channel TrenchMOS intermediate level FET
= 10 V;
80
40
mb
0
p
function of mounting base temperature
Normalized total power dissipation as a
0
= 25 °C
≤ 10 µs;
GS
= 50 Ω;
Figure 1
50
BUK6C2R1-55C
100
[1]
[2]
Min
-
-20
-16
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2012. All rights reserved.
T
mb
Max
55
20
16
228
162
914
300
175
175
228
914
770
03na19
(°C)
200
V
V
°C
°C
Unit
V
A
A
A
W
A
A
mJ
3 of 13