BUK6C2R1-55C NXP Semiconductors, BUK6C2R1-55C Datasheet - Page 7

• Manufacturer Part Number: BUK6C2R1-55C
• Description: Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK6C2R1-55C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
(A)
R
(mΩ)
I
D
10
10
10
10
10
10
DSon
10
-1
-2
-3
-4
-5
-6
8
6
4
2
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
T
0
0
j
= 25 °C; t
V
GS
100
(V) =
1
p
= 300 µs
3.8
min
200
2
typ
max
4.0
300
3
All information provided in this document is subject to legal disclaimers.
003aad806
V
003aaf971
I
GS
D
(A)
10.0
(V)
4.5
5.0
400
Rev. 3 — 18 January 2012
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.8
1.2
0.6
N-channel TrenchMOS intermediate level FET
4
3
2
1
0
3
0
-60
-60
junction temperature
factor as a function of junction temperature
0
0
BUK6C2R1-55C
max @1mA
min @2.5mA
typ @1mA
60
60
120
120
© NXP B.V. 2012. All rights reserved.
003aae542
T
003aag554
T
j
j
(°C)
( ° C)
180
180
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