BUK7506-55A NXP Semiconductors, BUK7506-55A Datasheet - Page 8

• Manufacturer Part Number: BUK7506-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7506-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
1.5
0.5
a
2
1
0
-60
factor as a function of junction temperature
0
60
(A)
I
S
100
80
60
40
20
120
0
0
All information provided in this document is subject to legal disclaimers.
T
j
03ne89
( ° C)
0.2
180
Rev. 03 — 2 February 2011
T
j
0.4
= 175 °C
Fig 14. Input and reverse transfer capacitances as a
(pF)
0.6
C
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
function of drain-source voltage; typical values
10
0.8
T
j
−2
N-channel TrenchMOS standard level FET
= 25 °C
V
SD
03nf24
C
C
C
(V)
oss
rss
iss
1.0
10
−1
BUK7506-55A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nf31
(V)
10
2
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