BUK7507-30B NXP Semiconductors, BUK7507-30B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7507-30B

Manufacturer Part Number
BUK7507-30B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
[1]
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
Dynamic characteristics
Q
D
DS
tot
DS(AL)S
DSon
GD
BUK7507-30B
N-channel TrenchMOS standard level FET
Rev. 02 — 22 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V loads
Automotive systems
Continuous current is limited by package.
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source avalanche
energy
gate-drain charge
Conditions
T
V
see
T
V
T
see
I
R
T
V
V
see
D
j
mb
j
j(init)
GS
GS
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
= 75 A; V
Figure
Figure 12
Figure 13
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; I
= 24 V; T
= 50 Ω; V
= 25 °C; unclamped
1; see
sup
j
D
D
≤ 175 °C
j
mb
GS
= 25 °C;
= 25 A;
= 25 A;
≤ 30 V;
Figure
= 25 °C;
= 10 V;
Figure 2
Figure 3
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
11;
[1]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
5.9
-
12
Max Unit
30
75
157
7
329
-
V
A
W
mΩ
mJ
nC

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BUK7507-30B Summary of contents

Page 1

... BUK7507-30B N-channel TrenchMOS standard level FET Rev. 02 — 22 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... N-channel TrenchMOS standard level FET Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 February 2011 BUK7507-30B Graphic symbol mbb076 3 Version SOT78A © NXP B.V. 2011. All rights reserved. ...

Page 3

... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 February 2011 BUK7507-30B N-channel TrenchMOS standard level FET Min - - -20 [1] Figure 1 - [2] Figure 1; - [1] - ≤ 10 µs; ...

Page 4

... BUK7507-30B Product data sheet Limit DSon DS D Capped due to package DC 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 February 2011 BUK7507-30B N-channel TrenchMOS standard level FET 03nm92 = 10 μ 100 μ 100 ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7507-30B Product data sheet Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 February 2011 BUK7507-30B N-channel TrenchMOS standard level FET Min Typ - - - - 03nm93 t p δ ...

Page 6

... ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 February 2011 BUK7507-30B Min Typ Max = 25 ° -55 ° 4.4 ...

Page 7

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 February 2011 BUK7507-30B N-channel TrenchMOS standard level FET 12 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03nm90 Label 200 300 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 February 2011 BUK7507-30B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 − 120 ...

Page 9

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 February 2011 BUK7507-30B N-channel TrenchMOS standard level FET C oss C iss C rss 0 −2 − function of drain-source voltage; typical values 03nm84 = 25 ° ...

Page 10

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 February 2011 BUK7507-30B N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7507-30B separated from data sheet BUK75_7607_30B v.1. BUK75_7607_30B v.1 20030407 BUK7507-30B Product data sheet ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 February 2011 BUK7507-30B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 February 2011 BUK7507-30B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 22 February 2011 Document identifier: BUK7507-30B ...

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