BUK7507-30B NXP Semiconductors, BUK7507-30B Datasheet - Page 9

• Manufacturer Part Number: BUK7507-30B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7507-30B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
10
V
DD
= 14 V
20
(A)
I
S
100
V
75
50
25
DD
30
0
0.0
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= 24 V
Q
G
03nm85
(nC)
Rev. 02 — 22 February 2011
40
0.4
T
j
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
(pF)
0.8
C
4000
3000
2000
1000
0
10
T
as a function of drain-source voltage; typical
values
V
j
−2
SD
= 25 °C
N-channel TrenchMOS standard level FET
03nm84
(V)
C
C
C
oss
rss
iss
1.2
10
−1
BUK7507-30B
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nm91
(V)
10
2
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