BUK7507-55B NXP Semiconductors, BUK7507-55B Datasheet
BUK7507-55B
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BUK7507-55B Summary of contents
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... BUK7507-55B N-channel TrenchMOS standard level FET Rev. 2 — 26 July 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... N-channel TrenchMOS standard level FET Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B Graphic symbol mbb076 Version SOT78A © NXP B.V. 2011. All rights reserved ...
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... Figure °C; see Figure °C mb ≤ 10 µs; T pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B Min Max - -20 20 [1] Figure [1] Figure [2] Figure 1; - 119 - 478 - 203 -55 175 -55 ...
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... P der (%) 150 200 T (°C) mb Fig DSon DS D (1) 1 All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B N-channel TrenchMOS standard level FET 100 150 Normalized total power dissipation as a function of mounting base temperature (V) DS 03na19 200 T (° ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7507-55B Product data sheet N-channel TrenchMOS standard level FET Conditions see Figure 4 vertical in still air - All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B Min Typ Max - - 0. 03nn67 t p δ = ...
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... °C j from source lead to source bond pad ° ° see Figure /dt = -100 A/ - ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B Min Typ Max Unit 4 0.02 1 µ 500 µ 100 100 ...
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... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B N-channel TrenchMOS standard level FET 25 R DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values ( ...
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... GS Fig 10. Gate-source threshold voltage as a function of 03nn64 7 200 300 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − ...
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... Fig 14. Input, output and reverse transfer capacitances 100 175 ° ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B N-channel TrenchMOS standard level FET C ISS C OSS C RSS function of drain-source voltage; typical values 03nn58 1.5 V ...
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... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...
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... Release date BUK7507-55B v.2 20110726 • Modifications: Type number BUK7507-55B separated from data sheet BUK75_7607_55B_1. • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 July 2011 Document identifier: BUK7507-55B ...