BUK7507-55B NXP Semiconductors, BUK7507-55B Datasheet - Page 7

• Manufacturer Part Number: BUK7507-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7507-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0071 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 119 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7507-55B,127

NXP Semiconductors
BUK7507-55B
Product data sheet
Fig 5.
Fig 7.
(A)
I
10
10
10
10
10
10
D
300
200
100
(A)
I
D
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
20
10
2
2
4
min
9
V
GS
= 8.5 (V)
typ
6
4
5.5
4.5
5
7.5
6.5
6
8
7
max
V
All information provided in this document is subject to legal disclaimers.
GS
8
V
(V)
03nn63
DS
03aa35
(V)
10
6
Rev. 2 — 26 July 2011
Fig 6.
Fig 8.
R
(mΩ )
DSon
(S)
g
25
20
15
10
60
40
20
fs
5
0
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
25
10
BUK7507-55B
50
15
75
V
© NXP B.V. 2011. All rights reserved.
GS
I
D
(V)
03nn62
03nn60
(A)
100
20
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