BUK7507-55B NXP Semiconductors, BUK7507-55B Datasheet - Page 2

• Manufacturer Part Number: BUK7507-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7507-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0071 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 119 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7507-55B,127

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK7507-55B
Product data sheet
Pin
1
2
3
mb
Type number
BUK7507-55B
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base;
connected to drain
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 July 2011
Simplified outline
SOT78A (TO-220AB)
1 2
mb
3
N-channel TrenchMOS standard level FET
Graphic symbol
BUK7507-55B
mbb076
G
© NXP B.V. 2011. All rights reserved.
D
S
Version
SOT78A
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