BUK7507-55B NXP Semiconductors, BUK7507-55B Datasheet - Page 4

• Manufacturer Part Number: BUK7507-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7507-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0071 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 119 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7507-55B,127

NXP Semiconductors
BUK7507-55B
Product data sheet
Fig 1.
Fig 3.
10
10
(A)
120
I
(A)
10
D
I
80
40
D
3
2
1
10
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
(1)
50
100
Limit R
DSon
150
= V
All information provided in this document is subject to legal disclaimers.
T
DS
mb
1
03nn68
/ I
(°C)
D
200
Rev. 2 — 26 July 2011
(1)
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
10
50
DC
BUK7507-55B
100
V
DS
(V)
150
t p = 10 μs
© NXP B.V. 2011. All rights reserved.
T
mb
100 μs
1 ms
10 ms
100 ms
03nn66
03na19
(°C)
200
10
2
4 of 14